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| Schottky Barrier Diodes (SBD) MA2C719 Silicon epitaxial planar type Unit : mm For high-frequency rectification I Features * DO-34 (DHD) package, allowing to rectify under (IF(AV) = 500 mA) condition * Allowing high-density mounting (5 mm pitch insertion) * Optimum for high-frequency rectification because of its short reverse recovery time (trr) * High rectification efficiency caused by its low forward-risevoltage (VF) * High reliability achieved by the glass sealed package COLORED BAND INDICATES CATHODE 0.45 max. 1 0.2 max. I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 40 40 1 500 30 125 -55 to +125 Unit V V A mA A C C 2 1.75 max. 1 : Cathode 2 : Annde JEDEC : DO-34 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 35 V IF = 500 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 60 5 Conditions Min Typ Max 100 0.55 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 400 MHz 3. * : trr measuring instrument I Cathode Indication Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse 1st Band Color Silver 13 min. 2.2 0.3 1st Band 2nd Band 0.2 max. 13 min. 2nd Band Silver A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA2C719 IF V F 103 25C Ta = 100C - 20C 105 Schottky Barrier Diodes (SBD) IR V R 0.8 0.7 104 VF Ta 102 Forward current IF (mA) Reverse current IR (A) Forward voltage VF (V) 0.6 0.5 IF = 500 mA 0.4 0.3 100 mA 0.2 10 mA 0.1 Ta = 100C 103 10 1 102 10-1 10 25C 10-2 0 0.1 0.2 0.3 0.4 0.5 0.6 1 0 10 20 30 40 50 60 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR T a 105 80 70 Ct VR 10 000 IF(surge) tW Ta = 25C IF(surge) tW Non repetitive Terminal capacitance Ct (pF) 104 Forward surge current IF(surge) (A) Reverse current IR (A) 60 50 40 30 20 10 1 000 103 VR = 40 V 35 V 5V 100 102 10 10 1 -40 0 0 40 80 120 160 200 0 10 20 30 40 50 60 1 0.3 1 3 10 30 100 300 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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